onsemi_SMMUN2216LT1G
original

onsemi
SMMUN2216LT1G

292-SMMUN2216LT1G
PDF Datasheet
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL
11 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector-emitter Voltage-Max
250mV
Halogen Free
Halogen Free
Height
1.01mm
hFE Min
160
Lead Free
Lead Free
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SMMUN2216LT1G Description

SMMUN2216LT1G Description

The SMMUN2216LT1G is a pre-biased NPN bipolar transistor offered by onsemi, designed for single applications. This surface-mount device is known for its robust performance and reliability, making it a popular choice in various electronic circuits. With a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V, the SMMUN2216LT1G is well-suited for low-power applications.

SMMUN2216LT1G Features

  • Technical Specifications:

    • Maximum collector current (Ic): 100 mA
    • Base resistor (R1): 4.7 kOhms
    • Vce saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
    • Maximum power dissipation: 246 mW
    • DC current gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
    • Collector cutoff current (Max): 500nA
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • Low Vce saturation for efficient power management
    • High current gain for improved signal amplification
    • Robust collector-emitter breakdown voltage for reliable operation in high-voltage circuits
  • Unique Advantages:

    • Surface-mount technology for compact design and ease of integration
    • Active product status, ensuring ongoing availability and support
    • REACH unaffected and RoHS3 compliant, adhering to environmental regulations

SMMUN2216LT1G Applications

The SMMUN2216LT1G is ideal for a variety of applications where low-power, reliable signal amplification is required. Some specific use cases include:

  • Audio Amplifiers: Utilizing its low Vce saturation and high current gain, the SMMUN2216LT1G can efficiently amplify audio signals in consumer electronics.
  • RF Applications: The device's ability to handle high collector-emitter voltages makes it suitable for use in radio frequency circuits.
  • Power Management: The SMMUN2216LT1G can be used in power management systems to control and regulate power flow in low-power devices.

Conclusion of SMMUN2216LT1G

The SMMUN2216LT1G is a versatile and reliable pre-biased NPN bipolar transistor that offers excellent performance in low-power applications. Its unique combination of technical specifications, performance benefits, and adherence to environmental regulations make it an ideal choice for a wide range of electronic circuits. Whether used in audio amplifiers, RF applications, or power management systems, the SMMUN2216LT1G delivers consistent and dependable performance.

FAQ

What is the standard lead time for SMMUN2216LT1G?
The standard lead time for SMMUN2216LT1G is 11 Weeks.
What voltage specification is listed for SMMUN2216LT1G?
What package or case is SMMUN2216LT1G available in?
What operating temperature range does SMMUN2216LT1G support?
Are there related or alternative parts for SMMUN2216LT1G?
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