onsemi_SMMUN2233LT1G
original

onsemi
SMMUN2233LT1G

292-SMMUN2233LT1G
PDF Datasheet
NPN Bipolar Digital Transistor (BRT), SOT-23 (TO-236) 3 LEAD, 3000-REEL
11 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Halogen Free
Halogen Free
hFE Min
80
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
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SMMUN2233LT1G Description

SMMUN2233LT1G Description

The SMMUN2233LT1G is a high-performance, single, pre-biased NPN bipolar transistor designed and manufactured by onsemi. This device is specifically engineered for applications requiring low power and high efficiency. With a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V, the SMMUN2233LT1G offers excellent performance in a wide range of electronic circuits.

SMMUN2233LT1G Features

  • Technical Specifications:

    • Maximum collector current (Ic): 100 mA
    • Base resistor (R1): 4.7 kOhms
    • Emitter base resistor (R2): 47 kOhms
    • Vce saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
    • Maximum power dissipation: 246 mW
    • DC current gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Moisture sensitivity level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • Surface mount technology for easy integration into compact designs
    • RoHS3 compliant, making it suitable for environmentally friendly applications
    • REACH unaffected, ensuring compliance with European chemical regulations
    • Active product status, ensuring ongoing availability and support
  • Unique Advantages:

    • Pre-biased design simplifies circuit design and reduces external component requirements
    • Low Vce saturation voltage for improved efficiency in low-voltage applications
    • High current gain for reliable signal amplification

SMMUN2233LT1G Applications

The SMMUN2233LT1G is ideal for a variety of applications where low power and high efficiency are critical:

  • Audio Amplifiers: Utilize the low Vce saturation and high current gain for clear audio signal amplification.
  • Power Management Circuits: Benefit from the low power dissipation and high breakdown voltage for reliable power regulation.
  • Communication Devices: Leverage the pre-biased design for simplified circuitry in wireless communication systems.
  • Automotive Electronics: Rely on the robust performance and moisture sensitivity level for use in harsh automotive environments.

Conclusion of SMMUN2233LT1G

The SMMUN2233LT1G from onsemi is a versatile and high-performing pre-biased NPN bipolar transistor. Its unique combination of technical specifications, performance benefits, and unique advantages make it an excellent choice for a wide range of applications, including audio amplifiers, power management circuits, communication devices, and automotive electronics. With ongoing product support and compliance with environmental regulations, the SMMUN2233LT1G is a reliable choice for your next design.

FAQ

What is the standard lead time for SMMUN2233LT1G?
The standard lead time for SMMUN2233LT1G is 11 Weeks.
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Are there related or alternative parts for SMMUN2233LT1G?
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What package or case is SMMUN2233LT1G available in?
Availability (In Stock : 1380 )
Quantity Unit Price Ext. Price
10+ $0.06216 $0.62
100+ $0.04981 $4.98
300+ $0.04364 $13.09
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