onsemi_SMUN5214T1G
original

onsemi
SMUN5214T1G

292-SMUN5214T1G
PDF Datasheet
NPN Bipolar Digital Transistor (BRT), SC-70 (SOT-323) 3 LEAD, 3000-REEL
12 Weeks

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Tech Specifications

Package/Case
SC
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Halogen Free
Halogen Free
hFE Min
80
Lead Free
Lead Free
Max Collector Current
100mA
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SMUN5214T1G Description

SMUN5214T1G Description

The SMUN5214T1G is a pre-biased NPN bipolar transistor offered by onsemi. This single transistor is designed for applications requiring low power and high reliability. With a maximum collector current of 100 mA and a breakdown voltage of 50 V, it is suitable for various electronic devices. The SMUN5214T1G features a surface-mount package, making it ideal for compact designs.

SMUN5214T1G Features

  • Technical Specifications: The SMUN5214T1G boasts a maximum collector current (Ic) of 100 mA, a base resistor (R1) of 10 kOhms, and an emitter-base resistor (R2) of 47 kOhms. It has a low Vce saturation of 250 mV at 300 µA and 10 mA, ensuring efficient operation. The device can handle a maximum power of 202 mW and has a cutoff collector current of 500 nA.

  • Performance Benefits: The SMUN5214T1G offers a high DC current gain (hFE) of at least 80 at 5 mA and 10 V, providing excellent amplification capabilities. Its low moisture sensitivity level (MSL) of 1 allows for unlimited storage time, reducing the risk of moisture-related damage.

  • Unique Advantages: Compared to similar models, the SMUN5214T1G stands out with its pre-biased design, which simplifies the biasing process and reduces the need for external components. This results in a more compact and cost-effective solution for various applications.

SMUN5214T1G Applications

The SMUN5214T1G is ideal for applications where low power and high reliability are crucial. Some specific use cases include:

  1. Audio Amplifiers: The SMUN5214T1G's high gain and low power consumption make it suitable for audio amplifiers in consumer electronics, such as smartphones and headphones.

  2. Signal Processing: Its low noise and high gain characteristics make it an excellent choice for signal processing applications in communication systems and industrial equipment.

  3. Power Management: The SMUN5214T1G can be used in power management circuits, such as voltage regulators and current limiters, due to its ability to handle up to 202 mW of power.

Conclusion of SMUN5214T1G

The SMUN5214T1G is a versatile pre-biased NPN bipolar transistor that offers a combination of high performance and reliability. Its unique features, such as the pre-biased design and low moisture sensitivity, make it an excellent choice for various applications in the electronics industry. Whether used in audio amplifiers, signal processing, or power management, the SMUN5214T1G delivers outstanding performance and value.

FAQ

What operating temperature range does SMUN5214T1G support?
SMUN5214T1G has an operating temperature range of 150°C.
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