onsemi

SMUN5233T1G

SMUN5233T1G Description

The SMUN5233T1G is a pre-biased NPN bipolar transistor offered by onsemi, designed to deliver exceptional performance in a wide range of applications. This single transistor features a maximum collector current (Ic) of 100 mA, making it suitable for low to medium power applications. With a maximum Vce saturation voltage of 250mV at 1mA and 10mA, the SMUN5233T1G ensures efficient operation and low power dissipation. The device is mounted on a surface mount package, allowing for compact and space-saving designs.

SMUN5233T1G Features

• Maximum collector current (Ic) of 100 mA
• Low Vce saturation voltage of 250mV @ 1mA, 10mA
• Surface mount packaging for compact designs
• Maximum power dissipation of 202 mW
• Maximum collector-emitter breakdown voltage of 50 V
• Pre-biased NPN configuration for ease of use
• DC current gain (hFE) of 80 @ 5mA, 10V
• Moisture sensitivity level (MSL) of 1 (unlimited)
• RoHS3 compliant and REACH unaffected

SMUN5233T1G Applications

The SMUN5233T1G is ideal for various applications where low to medium power amplification and switching are required. Some specific use cases include:

1. Audio amplifiers and preamplifiers
2. Low-power switching circuits
3. RF and IF amplifiers in communication systems
4. General-purpose signal amplification in industrial and consumer electronics
5. Motor control and drive circuits

Conclusion of SMUN5233T1G

The SMUN5233T1G is a versatile and reliable pre-biased NPN bipolar transistor that offers excellent performance in low to medium power applications. Its unique features, such as low Vce saturation voltage, high current gain, and compact surface mount packaging, make it an ideal choice for a wide range of applications. With its RoHS3 compliance and REACH unaffected status, the SMUN5233T1G is a responsible and efficient solution for your electronic design needs.