onsemi_SNRVBD660CTT4G
original

onsemi
SNRVBD660CTT4G

286-SNRVBD660CTT4G
PDF Datasheet
Schottky Power Rectifier, Switch-mode, 6 A, 60 V, 2500-REEL
11 Weeks

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Tech Specifications

Max Operating Temperature
175
Number of Terminals
2
Min Operating Temperature
-65
Terminal Position
SINGLE
Number of Elements
2
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
60
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SNRVBD660CTT4G Description

SNRVBD660CTT4G Description

The SNRVBD660CTT4G is a high-performance diode array designed and manufactured by onsemi, a leading semiconductor company. This device belongs to the category of Diode Arrays and is part of the SWITCHMODE™ series. It features a Schottky technology, which ensures fast recovery times and high efficiency. The SNRVBD660CTT4G is currently in active production and is compliant with the latest environmental regulations, including REACH and RoHS3.

SNRVBD660CTT4G Features

  • Fast Recovery Speed: The SNRVBD660CTT4G boasts a fast recovery time of less than 500ns, which is crucial for high-speed switching applications.
  • High Current Handling: With an average rectified current of 3A per diode, this device can handle high current loads, making it suitable for power electronics.
  • Low Reverse Leakage Current: The reverse leakage current at 60V is only 100 µA, which helps minimize power losses in reverse-biased conditions.
  • Low Forward Voltage: The maximum forward voltage at 3A is just 700 mV, ensuring high efficiency and low power dissipation.
  • Robust Voltage Rating: The device can withstand a maximum DC reverse voltage of 60V, making it suitable for various power electronics applications.
  • Surface Mount Packaging: The DPAK package allows for easy integration into surface-mount printed circuit boards, improving manufacturing efficiency and reliability.
  • Common Cathode Configuration: The 1 Pair Common Cathode configuration simplifies circuit design and reduces component count.

SNRVBD660CTT4G Applications

The SNRVBD660CTT4G is ideal for a wide range of applications where high efficiency, fast switching, and high current handling are required. Some specific use cases include:

  • Power Supplies: Due to its low forward voltage and high current handling, the SNRVBD660CTT4G is perfect for power supply rectification.
  • Automotive Electronics: The device's robust voltage rating and fast recovery make it suitable for automotive electronics, such as alternator rectifiers and power management systems.
  • Industrial Controls: In industrial control systems, the SNRVBD660CTT4G can be used for motor control and power conversion applications.
  • Renewable Energy Systems: The device's high efficiency and robustness make it suitable for solar power inverters and wind energy systems.

Conclusion of SNRVBD660CTT4G

The SNRVBD660CTT4G from onsemi is a high-performance diode array that offers a combination of fast recovery, high current handling, and low forward voltage. Its robust design and compliance with environmental regulations make it an excellent choice for a wide range of power electronics applications. With its unique features and advantages, the SNRVBD660CTT4G stands out as a reliable and efficient solution in the competitive market of diode arrays.

FAQ

What is the standard lead time for SNRVBD660CTT4G?
The standard lead time for SNRVBD660CTT4G is 11 Weeks.
What operating temperature range does SNRVBD660CTT4G support?
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