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SURHS8160T3G

The SURHS8160T3G is a high-voltage, high-power MOSFET from ON Semiconductor. It is designed for use in a variety of power conversion applications, including motor control, power supplies, and renewable energy systems.

Description:

The SURHS8160T3G is a N-channel MOSFET with a drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 8.1A. It features a low on-state resistance (Rds(on)) of 3.0mOhm maximum, which helps to minimize power dissipation and improve efficiency. The device also has a fast switching speed, with a typical gate charge (Qg) of 34nC and a low input capacitance (Ciss) of 830pF.

Features:

• High voltage and current ratings: 600V Vds and 8.1A Id
• Low on-state resistance: 3.0mOhm maximum
• Fast switching speed: 34nC Qg and 830pF Ciss
• High temperature operation: -55°C to +175°C
• Avalanche rugged protection
• Built-in body diode for efficient reverse recovery

Applications:

The SURHS8160T3G is suitable for use in a variety of power conversion applications, including:

• Motor control systems for industrial and automotive applications
• Power supplies for telecommunications equipment and computer systems
• Renewable energy systems, such as solar panel inverters and wind turbine converters
• Battery charging and management systems for electric vehicles and portable devices
• High-voltage power conversion and regulation in industrial and medical equipment

Overall, the SURHS8160T3G is a high-performance MOSFET that offers excellent electrical characteristics and robust protection features, making it an ideal choice for demanding power conversion applications.