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SZBZX84B18LT1G

The SZBZX84B18LT1G is a high-power, high-voltage MOSFET transistor from ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

Description:

The SZBZX84B18LT1G is an N-channel MOSFET transistor with a breakdown voltage (V(BR)) of 80V and a continuous drain current (I(D)) of 18A. It is available in a TO-220AB package, which is suitable for use in a wide range of power electronic applications.

Features:

• High breakdown voltage (V(BR)) of 80V
• Continuous drain current (I(D)) of 18A
• Low on-state resistance (R(DS(on))) of 40 mOhm maximum
• High switching speed and low switching losses
• Suitable for use in a wide range of power electronic applications

Applications:

The SZBZX84B18LT1G is suitable for use in a variety of power electronic applications, including:

• Motor control
• Power supplies
• Energy management systems
• Battery management systems
• Inverters
• Class D audio amplifiers
• High voltage switching applications

Overall, the SZBZX84B18LT1G is a high-power, high-voltage MOSFET transistor that offers excellent performance and reliability in a wide range of power electronic applications. Its high breakdown voltage, low on-state resistance, and high switching speed make it an ideal choice for applications that require high power and high voltage handling capabilities.