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SZMMBZ27VALT1G

The SZMMBZ27VALT1G is a high-power, high-voltage MOSFET transistor manufactured by ON Semiconductor. This device is designed for use in a variety of power electronic applications, including motor control, power supplies, and power management systems.

Description:

The SZMMBZ27VALT1G is an N-channel MOSFET with a breakdown voltage (V(BR)) of 27V. It has a continuous drain current (I(D)) of 6.4A and a maximum drain current (I(D)M) of 22A. The device has a low on-state resistance (R(DS(ON))) of 40 milliohms, which helps to minimize power dissipation and improve efficiency.

Features:

• N-channel MOSFET
• Breakdown voltage (V(BR)) of 27V
• Continuous drain current (I(D)) of 6.4A
• Maximum drain current (I(D)M) of 22A
• Low on-state resistance (R(DS(ON))) of 40 milliohms
• Suitable for use in power electronic applications

Applications:

The SZMMBZ27VALT1G is suitable for use in a variety of power electronic applications, including:

• Motor control
• Power supplies
• Power management systems
• Battery management systems
• Industrial control systems
• Automotive applications

This MOSFET transistor is designed to provide high performance and reliability in demanding power electronic applications. Its low on-state resistance and high current handling capability make it an ideal choice for applications that require efficient power management and control.