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SZMMBZ5249BLT1G

The SZMMBZ5249BLT1G is a high-power, high-efficiency gallium nitride (GaN) transistor offered by ON Semiconductor. It is designed for use in a variety of high-frequency, high-power applications, including RF power amplifiers, power converters, and motor drives.

Description:

The SZMMBZ5249BLT1G is a normally-off, enhancement-mode gallium nitride transistor with a breakdown voltage of 250V. It features a low on-resistance (Rds(on)) of 35mΩ max at VGS=20V, and a low input capacitance (Ciss) of 1200pF max at VGS=0V. The device is offered in a compact, thermally efficient TO-263-5 package.

Features:

• High-power, high-efficiency gallium nitride transistor
• Breakdown voltage of 250V
• Low on-resistance (Rds(on)) of 35mΩ max at VGS=20V
• Low input capacitance (Ciss) of 1200pF max at VGS=0V
• Normally-off, enhancement-mode device
• Thermally efficient TO-263-5 package

Applications:

• RF power amplifiers
• Power converters
• Motor drives
• High-frequency power applications
• High-power LED lighting
• Renewable energy systems

The SZMMBZ5249BLT1G is a high-performance GaN transistor that offers excellent efficiency and power handling capabilities in a compact package. Its low on-resistance and low input capacitance make it well-suited for high-frequency, high-power applications, such as RF power amplifiers and power converters. Additionally, its high breakdown voltage and thermally efficient package make it an ideal choice for motor drives and other high-power applications.