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SZMMSZ5248BT1G

The SZMMSZ5248BT1G is a high voltage, high frequency, and high efficiency MOSFET transistor from ON Semiconductor. It is designed for use in a wide range of applications, including power electronics, motor control, and industrial automation.

Description:

The SZMMSZ5248BT1G is a N-channel MOSFET transistor with a drain-source voltage (VDS) of 55V, a continuous drain current (ID) of 42A, and a gate-source voltage (VGS) of ±20V. It has a low on-state resistance (RDS(on)) of 42mΩ, which makes it suitable for high efficiency applications.

Features:

• High voltage, high frequency, and high efficiency MOSFET transistor
• N-channel, logic level gate drive
• Low on-state resistance (RDS(on)) of 42mΩ
• Drain-source voltage (VDS) of 55V
• Continuous drain current (ID) of 42A
• Gate-source voltage (VGS) of ±20V
• Suitable for use in power electronics, motor control, and industrial automation applications

Applications:

• Power electronics
• Motor control
• Industrial automation
• Switch mode power supplies (SMPS)
• Inverters
• Battery management systems (BMS)
• Renewable energy systems
• Electric vehicles (EVs) and hybrid vehicles (HEVs)