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SZNUD3124DMT1G
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Tech Specifications
SZNUD3124DMT1G Description
The SZNUD3124DMT1G is a high-performance N-channel MOSFET transistor manufactured by ON Semiconductor. This device is designed for use in a wide range of applications, including power switching, motor control, and power management.
Description:
The SZNUD3124DMT1G is a N-channel MOSFET transistor with a drain-source voltage (VDS) of 100V, a continuous drain current (ID) of 42A, and a gate-source voltage (VGS) of 4.5V to 10V. It is housed in a TO-220 package, making it suitable for use in a variety of applications.
Features:
- High drain-source voltage (VDS) of 100V
- Continuous drain current (ID) of 42A
- Low on-state resistance (RDS(on)) of 4.5 mOhm max
- High gate-source voltage (VGS) range of 4.5V to 10V
- Thermally efficient TO-220 package
- Suitable for use in a wide range of applications
Applications:
The SZNUD3124DMT1G is suitable for use in a variety of applications, including:
- Power switching
- Motor control
- Power management
- Inverters
- Converters
- Battery management systems
- Industrial control systems
Overall, the SZNUD3124DMT1G is a high-performance N-channel MOSFET transistor that offers excellent electrical characteristics and thermal efficiency, making it a popular choice for use in a wide range of applications.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.39979 | $2.00 |
| 50+ | $0.32015 | $16.01 |
| 150+ | $0.28600 | $42.90 |
| 500+ | $0.23861 | $119.30 |
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