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SZNUP3105LT3G

The SZNUP3105LT3G is a N-channel power MOSFET from ON Semiconductor. It is designed for low voltage, high current applications and is available in a TO-263-5 package.

Description:

The SZNUP3105LT3G is a N-channel power MOSFET with a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 105A. It has a low on-state resistance (RDS(on)) of 4.5 mOhm max, which makes it suitable for high efficiency applications. The device also features a low input capacitance and fast switching speed, making it ideal for use in (switching power supplies) and motor control applications.

Features:

• N-channel power MOSFET
• VDS of 30V
• ID of 105A
• RDS(on) of 4.5 mOhm max
• Low input capacitance
• Fast switching speed

Applications:

• (Switching power supplies)
• (Motor control)
• (Load switches)
• (Energy storage systems)
• (Battery management systems)

Note: The information provided is based on the datasheet and other available information about the SZNUP3105LT3G. For more detailed information, please refer to the datasheet or contact ON Semiconductor directly.