onsemi

TIG065E8-TL-H

TIG065E8-TL-H Description

The TIG065E8-TL-H is a high-performance, single IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by onsemi. This device is specifically engineered for applications requiring high current and voltage handling capabilities. With an operating temperature of 150°C (TJ) and a standard input type, the TIG065E8-TL-H is designed for reliability and efficiency in demanding electronic systems.

TIG065E8-TL-H Features

• Technical Specifications: The TIG065E8-TL-H boasts a maximum collector-emitter breakdown voltage of 400V and a collector pulsed current rating of 150A. The Vce(on) (maximum) at Vge and Ic is 7V @ 2.5V, 100A, ensuring efficient power management.
• Mounting Type: Surface mount technology allows for compact design and easy integration into various electronic systems.
• ECCN and REACH Status: The TIG065E8-TL-H is classified as EAR99 and REACH unaffected, facilitating global trade and compliance with environmental regulations.
• RoHS Compliance: This IGBT is compliant with RoHS3, adhering to strict environmental standards.
• Moisture Sensitivity Level (MSL): Rated at MSL 1, the TIG065E8-TL-H is suitable for applications with unlimited storage time before reflow soldering.

TIG065E8-TL-H Applications

The TIG065E8-TL-H is ideal for applications where high power and efficient energy management are critical. Some specific use cases include:

• Industrial Automation: Drive systems and motor controls that require high current and voltage switching.
• Power Supplies: High-efficiency power conversion in applications such as solar inverters and uninterruptible power supplies (UPS).
• Electric Vehicles: Traction motor controls and battery management systems that demand robust and reliable IGBTs.
• Renewable Energy: Grid-tied inverters for wind and solar power systems that need efficient power handling.

Conclusion of TIG065E8-TL-H

The TIG065E8-TL-H, with its robust technical specifications and compliance with environmental standards, stands out as a reliable choice for high-power applications. Its unique features, such as high current handling and low Vce(on), make it an advantageous option over similar models. Despite being classified as obsolete, its performance benefits and applications in critical systems make it a valuable component for legacy systems and specific high-power requirements.