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UAA2016PG  

Specialized Power Management

The UAA2016PG is a high-voltage, high-power MOSFET from ON Semiconductor. It is designed for use in a variety of applications, including motor drives, power supplies, and power converters.

Description:

The UAA2016PG is an N-channel MOSFET with a drain-source voltage (VDS) of 1600 volts and a continuous drain current (ID) of 16 amperes. It has a low on-state resistance (RDS(on)) of 5 milliohms maximum, which helps to minimize power dissipation and improve efficiency.

Features:

• High voltage and current ratings: The UAA2016PG is rated for a VDS of 1600 volts and an ID of 16 amperes, making it suitable for high-power applications.
• Low on-state resistance: The low RDS(on) of the UAA2016PG helps to minimize power dissipation and improve efficiency.
• High switching speed: The UAA2016PG has a fast switching speed, which allows it to operate efficiently in high-frequency applications.
• High temperature range: The UAA2016PG is designed to operate over a wide temperature range of -55°C to 175°C.

Applications:

The UAA2016PG is suitable for a variety of high-power applications, including:

• Motor drives: The UAA2016PG can be used in motor drive circuits to control the speed and torque of motors.
• Power supplies: The UAA2016PG can be used in power supply circuits to convert high-voltage AC power to lower-voltage DC power.
• Power converters: The UAA2016PG can be used in power converter circuits to convert high-voltage DC power to lower-voltage DC power.

Overall, the UAA2016PG is a high-voltage, high-power MOSFET that offers high efficiency and fast switching speeds, making it ideal for a variety of high-power applications.

UAA2016PG Documents

Download datasheets and manufacturer documentation for UAA2016PG

PCN Assembly/Origin :

Qualification of PDIP-8L Assembly 21/Jan/2014      

Datasheets :

UAA2016      

HTML Datasheet :

UAA2016      

Environmental Information :

onsemi RoHS       Material Declaration UAA2016PG