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UF4SC120030B7SSB
2088-UF4SC120030B7SSB
PDF Datasheet
SiC MOSFETs 1200V/30mOhms,SICFET,G4,TO263-7
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Tech Specifications
Configuration
Single
Id - Continuous Drain Current
56 A
Product
SiC FET Modules
Channel Mode
Enhancement
Fall Time
11 ns
Qg - Gate Charge
37.8 nC
Tradename
SiC FET
Package / Case
D2PAK-7
UF4SC120030B7SSB Description
SiC MOSFETs 1200V/30mOhms,SICFET,G4,TO263-7
FAQ
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