onsemi_UMZ1NT1G
original

onsemi
UMZ1NT1G

277-UMZ1NT1G
PDF Datasheet
NPN/PNP BJT Transistor, 50V, 200mA, 114MHz, SC-88/SC70-6
20 Weeks

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Tech Specifications

Package / Case
SC
Collector- Base Voltage VCBO
60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector - Emitter Voltage VCEO
50V
Collector-emitter Voltage-Max
250mV
Current Rating
200mA
Emitter- Base Voltage VEBO
7V
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UMZ1NT1G Description

UMZ1NT1G Description

The UMZ1NT1G from onsemi is a high-performance NPN/PNP bipolar transistor array housed in a compact SC88/SC70 surface-mount package. Designed for low-power applications, it features a 50V collector-emitter breakdown voltage (VCEO) and a 200mA maximum collector current (IC), making it suitable for signal amplification and switching tasks. With a transition frequency (fT) of 114MHz/142MHz, it delivers excellent high-frequency response, ideal for RF and analog circuits. The device exhibits low leakage current (2µA max cutoff current) and high DC current gain (hFE ≥ 200 @ 2mA, 6V), ensuring efficient operation in precision applications.

UMZ1NT1G Features

  • Dual NPN/PNP Configuration: Integrated complementary transistors simplify circuit design for push-pull or differential applications.
  • Low Saturation Voltage: 250mV @ 10mA, 100mA (typ.) minimizes power loss in switching modes.
  • High Transition Frequency: 114MHz/142MHz enables robust performance in high-speed signal processing.
  • Compact SC70 Package: Space-saving surface-mount design (MSL1) suits densely populated PCBs.
  • Low Power Dissipation: 250mW max ensures reliability in energy-efficient systems.
  • Compliance: ROHS3, REACH, and EAR99 certified, meeting global environmental and export standards.

UMZ1NT1G Applications

  • Signal Amplification: Audio preamps, sensor interfaces, and low-noise analog stages.
  • High-Speed Switching: RF modules, oscillator circuits, and digital logic level shifters.
  • Portable Electronics: Battery-operated devices (e.g., wearables, IoT sensors) due to low leakage and compact size.
  • Automotive Systems: ECU signal conditioning, where temperature stability and reliability are critical.
  • Industrial Control: Relay drivers and motor control circuits leveraging its low VCE(sat).

Conclusion of UMZ1NT1G

The UMZ1NT1G stands out for its balanced NPN/PNP performance, high-frequency capability, and miniaturized footprint. Its low saturation voltage and high hFE make it superior to generic transistors in precision applications, while compliance with environmental standards ensures broad usability. Ideal for space-constrained, high-efficiency designs, this transistor array is a versatile choice for consumer, automotive, and industrial electronics.

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