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DRA2114E0L
292-DRA2114E0L
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN
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Tech Specifications
Package/Case
TO-236-3
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
-100mA
Emitter Base Voltage (VEBO)
-6V
Height
1.1mm
Length
2.9mm
DRA2114E0L Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 mW Surface Mount MINI3-G3-B
FAQ
What voltage specification is listed for DRA2114E0L?
The listed voltage-related specification for DRA2114E0L is 50V.
What is the mounting type of DRA2114E0L?
What package or case is DRA2114E0L available in?
Are there related or alternative parts for DRA2114E0L?
What is DRA2114E0L?
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