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Tech Specifications
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Current Rating
-100mA
Lead Free
Contains Lead
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Power Dissipation
300mW
Mount
Through Hole
UNR411F00A Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 80 MHz 300 mW Through Hole NS-B1
FAQ
Are there related or alternative parts for UNR411F00A?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
Is UNR411F00A currently in stock?
What voltage specification is listed for UNR411F00A?
What package or case is UNR411F00A available in?
What is UNR411F00A?
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