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Tech Specifications
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Current Rating
-100mA
Lead Free
Contains Lead
Max Breakdown Voltage
50V
Max Collector Current
500nA
Max Power Dissipation
300mW
Mount
Through Hole
UNR411L00A Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 80 MHz 300 mW Through Hole NS-B1
FAQ
What is the mounting type of UNR411L00A?
UNR411L00A uses a Through Hole mounting style based on the listed product specifications.
Is UNR411L00A currently in stock?
What package or case is UNR411L00A available in?
What is UNR411L00A?
What voltage specification is listed for UNR411L00A?
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