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Tech Specifications
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Current Rating
100mA
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Power Dissipation
300mW
Mount
Through Hole
UNR421100A Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 300 mW Through Hole NS-B1
FAQ
What is the mounting type of UNR421100A?
UNR421100A uses a Through Hole mounting style based on the listed product specifications.
Are there related or alternative parts for UNR421100A?
What package or case is UNR421100A available in?
What is UNR421100A?
Is UNR421100A currently in stock?
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