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Tech Specifications
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Power Dissipation
300mW
Mount
Through Hole
Package Quantity
5000
Packaging
Cut Tape
UNR421400A Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 300 mW Through Hole NS-B1
FAQ
What voltage specification is listed for UNR421400A?
The listed voltage-related specification for UNR421400A is 50V.
What is UNR421400A?
What package or case is UNR421400A available in?
Are there related or alternative parts for UNR421400A?
What is the mounting type of UNR421400A?
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