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Tech Specifications
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Power Dissipation
300mW
Mount
Through Hole
Package Quantity
1
Packaging
Cut Tape
UNR421F00A Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 300 mW Through Hole NS-B1
FAQ
Are there related or alternative parts for UNR421F00A?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
Is UNR421F00A currently in stock?
What is the mounting type of UNR421F00A?
What voltage specification is listed for UNR421F00A?
What is UNR421F00A?
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