Power Integrations
IHD660IC2

730-IHD660IC2
PDF Datasheet
IC GATE DRVR HALF-BRIDGE MODULE

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ISO9001
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ISO14001
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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Input Type
Inverting
Driven Configuration
Half-Bridge
Rise / Fall Time (Typ)
100ns, 80ns
ECCN
EAR99
Number of Drivers
2
Gate Type
IGBT, N-Channel MOSFET
Mounting Type
Through Hole
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IHD660IC2 Description

This electronic device regards Tray method as the top priority. This IHD660IC2 packaging method makes it simple and quick to package big quantities of powdered commodities. This IHD660IC2 is produced by this Power Integrations in order to provide enough products to meet consumers’ demand. The blueprint of this Power Integrations is to keep pace with the growth of world’s leading level of science and technology. This IHD660IC2 belongs to Gate Drivers ICs category. It’s previous category pertains to Power Management (PMIC). Complete power supply systems can be implemented using Power Management Integrated Circuits (PMICs). It combines several voltage regulators and control circuits onto a single chip. They simplify and cost-effectively manage system power management while reducing component count and board area. This IHD660IC2 is a great fit for embedded processing in a variety of applications. They are includes edge computing, the Internet of Things (IoT), industrial and medical IoT, electric vehicles (EVs), and autonomous cars.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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