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PE4140B-Z

The PE4140B-Z is a high-frequency, high-efficiency GaN-based power amplifier designed by pSemi Corporation. This model is specifically designed for applications that require high power and efficiency in a compact form factor.

Description:

The PE4140B-Z is a gallium nitride (GaN) on silicon power amplifier that operates in the 2.7 to 2.9 GHz frequency range. It is designed to provide high output power and high efficiency in a small form factor. The device is available in a compact 6x8mm QFN package.

Features:

• High output power: The PE4140B-Z can deliver up to 40 watts of output power.
• High efficiency: The device offers high efficiency of up to 75%.
• Wideband operation: The amplifier operates over a frequency range of 2.7 to 2.9 GHz.
• Compact form factor: The device is available in a small 6x8mm QFN package.
• GaN technology: The use of gallium nitride technology allows for high power and efficiency in a small form factor.

Applications:

The PE4140B-Z is suitable for a variety of applications that require high power and efficiency in a compact form factor. Some potential applications include:

• Wireless communication systems: The device can be used in wireless communication systems that operate in the 2.7 to 2.9 GHz frequency range, such as cellular base stations and point-to-point radio links.
• Radar systems: The high power and efficiency of the PE4140B-Z make it suitable for radar systems that require high output power in a compact form factor.
• Electronic warfare systems: The device can be used in electronic warfare systems that require high power and efficiency in a small form factor.

Overall, the PE4140B-Z is a high-performance power amplifier that offers high output power and high efficiency in a compact form factor, making it suitable for a variety of applications that require high power and efficiency.