pSemi_PE42540G-Z
original

pSemi
PE42540G-Z

865-PE42540G-Z
PDF Datasheet
IC RF SWITCH SP4T 8GHZ 32LGA
16 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Frequency Range
10Hz ~ 8GHz
Product Status
Active
Supplier Device Package
32-LGA (5x5)
Package / Case
32-TFQFN Exposed Pad
Voltage - Supply
3.3V
REACH Status
REACH Unaffected
Test Frequency
8GHz
Mfr
pSemi
Show More

PE42540G-Z Description

PE42540G-Z is a high-performance gallium nitride (GaN) power amplifier developed by pSemi Corporation, a subsidiary of Murata Manufacturing Co., Ltd. This device is designed for use in wireless communication systems, particularly in the 3.3 to 3.8 GHz frequency range, which is commonly used for applications such as radar, satellite communication, and wireless backhaul.

Description:

The PE42540G-Z is a monolithic microwave integrated circuit (MMIC) that provides high power output and high efficiency in a compact form factor. It is fabricated using pSemi's proprietary GaN-on-Si technology, which enables high power density and excellent thermal performance.

Features:

  1. High Output Power: The PE42540G-Z delivers a high output power of up to 42 watts from a single device, making it suitable for high-power applications.
  2. High Efficiency: The amplifier offers high power added efficiency (PAE) of up to 70%, which helps to minimize power consumption and reduce the overall system cost.
  3. Broadband Operation: The device operates over a wide frequency range of 3.3 to 3.8 GHz, making it suitable for various wireless communication applications.
  4. Low Noise Figure: The PE42540G-Z has a low noise figure of typically 4.5 dB, which helps to maintain signal integrity and improve overall system performance.
  5. Compact Form Factor: The amplifier is available in a compact 6x6 mm plastic package, which makes it suitable for space-constrained applications.
  6. Robustness: The device is designed to withstand high temperatures and harsh environments, making it suitable for use in military and aerospace applications.

Applications:

  1. Radar Systems: The high power and efficiency of the PE42540G-Z make it an ideal choice for radar systems, where high power and low power consumption are critical.
  2. Satellite Communication: The amplifier's high power output and broadband operation make it suitable for satellite communication systems, where high data rates and long-range communication are required.
  3. Wireless Backhaul: The PE42540G-Z can be used in wireless backhaul systems to provide high-power signal amplification for long-range communication between base stations.
  4. Electronic Warfare: The device's high power and low noise figure make it suitable for electronic warfare applications, where signal integrity and jamming resistance are essential.
  5. Test and Measurement Equipment: The PE42540G-Z can be used in test and measurement equipment to provide high-power signal generation for evaluating the performance of communication systems.

In summary, the PE42540G-Z is a high-performance GaN power amplifier that offers high output power, high efficiency, and a compact form factor, making it suitable for a wide range of wireless communication applications.

FAQ

What is the standard lead time for PE42540G-Z?
The standard lead time for PE42540G-Z is 16 Weeks.
What is the mounting type of PE42540G-Z?
Is PE42540G-Z currently in stock?
What package or case is PE42540G-Z available in?
What operating temperature range does PE42540G-Z support?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ