Model HM1188FNLT is a high-frequency, high-power gallium nitride (GaN) transistor offered by Pulse Electronics. This device is designed to provide high efficiency and high power density in a compact form factor, making it ideal for a wide range of applications.
The HM1188FNLT is a gallium nitride (GaN) transistor that operates at high frequencies and high power levels. It is designed for use in high-power RF and microwave applications, where high efficiency and high power density are required. The device is available in a compact, surface-mount package, making it easy to integrate into a variety of systems.
The HM1188FNLT is suitable for use in a wide range of high-power RF and microwave applications, including:
In summary, the HM1188FNLT is a high-frequency, high-power GaN transistor that offers high efficiency and high power density in a compact form factor. It is suitable for use in a wide range of high-power RF and microwave applications, where high efficiency and high power density are required.
Download datasheets and manufacturer documentation for HM1188FNLT