Qorvo_TGF2022-12
original

Qorvo
TGF2022-12

750-TGF2022-12
RF Power Transistor, 0 to 20 GHz, 1.2 W, 13 dB, 12 V, GaAs, 0.57 X 0.79 X 0.10 mm, pHEMT

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Drain to Source Voltage (Vdss)
12 V
Continuous Drain Current (ID)
360 mA
Gate to Source Voltage (Vgs)
-14 V
Frequency
18 GHz
Maximum Operating Temperature
150 °C
Gain
8 dB
RoHS
Compliant

TGF2022-12 Description

RF Power Transistor, 0 to 20 GHz, 1.2 W, 13 dB, 12 V, GaAs, 0.57 X 0.79 X 0.10 mm, pHEMT

FAQ

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TGF2022-12 is a Special Purpose Regulators from Qorvo. This product page provides its main specifications, pricing information, availability, and inquiry options.
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