Rectron USA_RM12N650LD-T
original

Rectron USA
RM12N650LD-T

278-RM12N650LD-T
PDF Datasheet
N-Channel Super Junction Power MOSFET

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Original

Tech Specifications

Typical Gate Threshold Voltage (V)
3.5
PCB changed
2
Maximum Gate Source Voltage (V)
±30
Maximum Drain Source Voltage (V)
650
HTS
8541.29.00.95
PPAP
No
Package Length
6.7(Max)
Maximum Power Dissipation (mW)
101000
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RM12N650LD-T Description

Reel provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the RM12N650LD-T belongs to can be classified under the Discrete Semiconductors. RM12N650LD-T is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. RM12N650LD-T provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Rectron USA plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Rectron USA is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Rectron USA builds trust with consumers and enhances the overall reputation of their products.

FAQ

What package or case is RM12N650LD-T available in?
RM12N650LD-T is available in the DPAK-3 (TO-252-3) package / case.
What operating temperature range does RM12N650LD-T support?
Are there related or alternative parts for RM12N650LD-T?
What voltage specification is listed for RM12N650LD-T?
What is the mounting type of RM12N650LD-T?
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