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Renesas Electronics Corporation
2SC5409
283-2SC5409
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION / NPN EPITAXIAL SILICON RF Transistor FOR MICROWAVE HIGH-GAIN AMPLIFICATION
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Tech Specifications
Estimated EOL Date
Obsolete / End of life
Family
RF Transistors(BJT)
Family Name
2SC5409
Introduction Date
August 18, 1998
2SC5409 Description
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION / NPN EPITAXIAL SILICON RF Transistor FOR MICROWAVE HIGH-GAIN AMPLIFICATION
FAQ
What is 2SC5409?
2SC5409 is a Bipolar RF Transistors from Renesas Electronics Corporation. This product page provides its main specifications, pricing information, availability, and inquiry options.
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Are there related or alternative parts for 2SC5409?
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