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Renesas Electronics Corporation
2SK2597
288-2SK2597
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION / N-CHANNEL MOS FIELD EFFECT TRANSISTOR
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Tech Specifications
Estimated EOL Date
Obsolete / End of life
Family
JFETs(Junction Field Effect)
Family Name
2SK2597
Introduction Date
March 25, 1997
2SK2597 Description
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION / N-CHANNEL MOS FIELD EFFECT TRANSISTOR
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What is 2SK2597?
2SK2597 is a JFETs from Renesas Electronics Corporation. This product page provides its main specifications, pricing information, availability, and inquiry options.
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