
Renesas Electronics Corporation
6116LA150DB
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6116LA150DB Description
6116LA150DB Description
The 6116LA150DB is a 16Kbit Static Random Access Memory (SRAM) IC designed for a wide range of applications requiring fast and reliable data storage. Manufactured by Renesas Electronics Corporation, this memory IC chip is organized as 2K x 8, offering a parallel memory interface for efficient data transfer. The 6116LA150DB operates with a supply voltage range of 4.5V to 5.5V and features an access time of 150 nanoseconds, ensuring high-speed data retrieval. The write cycle time for both word and page operations is also 150 nanoseconds, maintaining consistent performance across read and write operations. This through-hole mounted device is packaged in a 24-pin ceramic dual in-line package (CDIP) and is categorized under Memory IC Chips.
6116LA150DB Features
- Memory Organization: The 6116LA150DB is organized as 2K x 8, providing a total memory size of 16Kbit. This organization allows for efficient memory addressing and data storage.
- Access Time: With an access time of 150 nanoseconds, the 6116LA150DB ensures rapid data retrieval, making it suitable for applications requiring high-speed memory access.
- Write Cycle Time: The write cycle time of 150 nanoseconds for both word and page operations ensures that data can be written to the memory as quickly as it can be read, maintaining overall system performance.
- Supply Voltage: The 6116LA150DB operates within a supply voltage range of 4.5V to 5.5V, providing flexibility in power supply requirements and ensuring compatibility with various systems.
- Memory Type: As a volatile memory, the 6116LA150DB retains data only while power is supplied, making it ideal for applications where data is frequently updated and temporary storage is required.
- Mounting Type: The through-hole mounting type ensures robust mechanical stability and ease of integration into printed circuit boards (PCBs).
- Package: The 24-pin ceramic dual in-line package (CDIP) provides a reliable and durable housing for the memory IC, suitable for a variety of industrial and commercial applications.
- Moisture Sensitivity Level (MSL): With an MSL rating of 1 (Unlimited), the 6116LA150DB is highly resistant to moisture, ensuring long-term reliability and performance in various environmental conditions.
- ECCN and HTSUS: The 6116LA150DB is classified under ECCN 3A001A2C and HTSUS 8542.32.0041, providing clear regulatory compliance for international trade and export.
6116LA150DB Applications
The 6116LA150DB is ideal for applications that require fast, reliable, and temporary data storage. Its high-speed access and write times make it suitable for:
- Embedded Systems: In embedded systems where quick data access and modification are crucial, the 6116LA150DB provides the necessary performance to ensure smooth operation.
- Industrial Automation: For industrial applications requiring real-time data processing and control, the 6116LA150DB's fast access times and robust construction make it an ideal choice.
- Telecommunications: In telecommunication equipment, the 6116LA150DB can be used for temporary data storage and buffering, ensuring efficient data handling and transmission.
- Consumer Electronics: In consumer electronics, such as gaming consoles and digital cameras, the 6116LA150DB can provide fast and reliable memory for temporary data storage and processing.
Conclusion of 6116LA150DB
The 6116LA150DB from Renesas Electronics Corporation is a high-performance SRAM IC designed to meet the demands of various applications requiring fast and reliable memory solutions. With its 150 nanosecond access and write cycle times, 2K x 8 memory organization, and robust through-hole mounting, the 6116LA150DB offers significant advantages over similar models. Its compatibility with a wide range of supply voltages and its durable CDIP packaging make it a versatile choice for embedded systems, industrial automation, telecommunications, and consumer electronics. Despite being marked as obsolete, the 6116LA150DB remains a reliable and efficient memory solution for applications where its unique features and performance benefits are required.



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