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6116LA55TDB

6116LA55TDB Description

The 6116LA55TDB is a 16Kbit Static Random Access Memory (SRAM) IC designed by Renesas Electronics Corporation. This memory device is organized as 2K x 8, offering a total of 16,384 bits of volatile memory. It features a parallel memory interface, making it suitable for applications requiring high-speed data access and transfer. The 6116LA55TDB operates within a supply voltage range of 4.5V to 5.5V and has an access time of 55 nanoseconds, ensuring rapid data retrieval. The write cycle time for both word and page operations is also 55 nanoseconds, maintaining consistent performance across read and write operations.

The 6116LA55TDB is housed in a 24-pin ceramic dual in-line package (CDIP), which is ideal for through-hole mounting on printed circuit boards. This packaging method ensures robust mechanical stability and reliable electrical connections. The device is categorized under Memory ICs Products and is identified by the base product number 6116LA. It is important to note that the 6116LA55TDB is classified as obsolete, which means it is no longer in active production but may still be available through existing inventory channels.

6116LA55TDB Features

• Memory Organization: The 6116LA55TDB is organized as 2K x 8, providing 16Kbit of volatile SRAM storage. This organization allows for efficient memory addressing and data management.
• Access Time: With an access time of 55 nanoseconds, the 6116LA55TDB ensures fast data retrieval, making it suitable for applications requiring rapid memory access.
• Write Cycle Time: The write cycle time of 55 nanoseconds for both word and page operations ensures consistent performance and efficient data handling.
• Supply Voltage: The device operates within a supply voltage range of 4.5V to 5.5V, providing flexibility in power supply requirements.
• Memory Interface: The parallel memory interface allows for high-speed data transfer and is compatible with a wide range of systems and architectures.
• Mounting Type: The through-hole mounting type ensures robust mechanical stability and reliable electrical connections on printed circuit boards.
• Moisture Sensitivity Level (MSL): The 6116LA55TDB has an MSL of 1 (Unlimited), indicating it is not sensitive to moisture, which enhances its reliability in various environmental conditions.
• ECCN and REACH Status: The 6116LA55TDB is classified under ECCN 3A001A2C and is REACH unaffected, ensuring compliance with international export control regulations and environmental standards.

6116LA55TDB Applications

The 6116LA55TDB is ideal for a variety of applications where fast access times and reliable data storage are critical. Some specific use cases include:

• Embedded Systems: The 6116LA55TDB can be used in embedded systems where rapid data access and storage are required, such as in microcontroller-based applications.
• Industrial Automation: In industrial automation, the 6116LA55TDB can be used for temporary data storage and fast access, ensuring efficient operation of control systems.
• Telecommunications: The device can be utilized in telecommunications equipment for buffering and temporary data storage, enhancing system performance.
• Consumer Electronics: The 6116LA55TDB can be used in consumer electronics for temporary data storage and fast access, improving the responsiveness of devices.

Conclusion of 6116LA55TDB

The 6116LA55TDB is a versatile and reliable SRAM IC designed for applications requiring fast data access and storage. Its 2K x 8 memory organization, 55 nanosecond access time, and parallel memory interface make it an excellent choice for a variety of applications. Despite being classified as obsolete, the 6116LA55TDB remains a valuable component for existing systems and legacy applications. Its robust packaging and compliance with international standards ensure its reliability and compatibility in various environments. For designers and engineers seeking a reliable SRAM solution, the 611LA655TDB is a worthy consideration.