Renesas Electronics Corporation
70T659S12BCI

774-70T659S12BCI
PDF Datasheet
IC SRAM 4.5MBIT PAR 256CABGA

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
3A991B2A
Memory Organization
128K x 36
Mounting Type
Surface Mount
Memory Type
Volatile
Product Status
Last Time Buy
Supplier Device Package
256-CABGA (17x17)
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70T659S12BCI Description

70T659S12BCI Description

The 70T659S12BCI is a high-performance Static Random Access Memory (SRAM) IC designed by Renesas Electronics Corporation. This memory IC is characterized by its 128K x 36 memory organization, offering a total memory size of 4.5 Mbit. It is designed for surface mount applications and comes in a 256-ball BGA package, ensuring robust and reliable integration into modern electronic systems. The 70T659S12BCI operates within a supply voltage range of 2.4V to 2.6V and features an access time of 12 ns, with a matching write cycle time of 12 ns. This combination of fast access and write times makes it ideal for applications requiring rapid data retrieval and modification.

70T659S12BCI Features

  • Memory Type: Volatile SRAM, ensuring data is quickly accessible and modifiable.
  • Memory Interface: Parallel, allowing for efficient data transfer and communication with other system components.
  • Access Time: 12 ns, providing rapid data retrieval capabilities.
  • Write Cycle Time: 12 ns, ensuring quick data modification.
  • Memory Size: 4.5 Mbit, offering substantial storage capacity for various applications.
  • Supply Voltage: 2.4V to 2.6V, ensuring compatibility with low-power systems.
  • Mounting Type: Surface Mount, facilitating easy integration into compact and high-density designs.
  • Package: 256CABGA, providing a robust and reliable physical form factor.
  • Moisture Sensitivity Level: MSL 3 (168 Hours), ensuring durability in various environmental conditions.
  • Product Status: Last Time Buy, indicating limited availability and the need for timely procurement.

70T659S12BCI Applications

The 70T659S12BCI is well-suited for a variety of applications that demand high-speed data access and reliability. Its fast access and write times make it ideal for use in:

  • Embedded Systems: Providing fast and reliable memory for microcontrollers and embedded processors.
  • Networking Equipment: Enabling high-speed data buffering and processing in routers and switches.
  • Industrial Automation: Supporting real-time control systems that require rapid data retrieval and modification.
  • Telecommunications: Facilitating efficient data handling in communication systems.
  • Medical Devices: Ensuring reliable and quick data access in critical medical equipment.

Conclusion of 70T659S12BCI

The 70T659S12BCI from Renesas Electronics Corporation is a high-performance SRAM IC designed to meet the demanding requirements of modern electronic systems. With its fast access and write times, substantial memory capacity, and reliable surface mount packaging, it stands out as a superior choice for applications requiring rapid data handling. Its compatibility with low-power systems and robust environmental durability further enhance its appeal. As a Last Time Buy product, it is essential for designers and engineers to secure this component promptly to leverage its unique features and advantages in their projects.

FAQ

What operating temperature range does 70T659S12BCI support?
70T659S12BCI has an operating temperature range of -40°C ~ 85°C (TA).
What package or case is 70T659S12BCI available in?
What is 70T659S12BCI?
What voltage specification is listed for 70T659S12BCI?
Are there related or alternative parts for 70T659S12BCI?
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