Renesas Electronics Corporation_70V639S12BFI
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Renesas Electronics Corporation
70V639S12BFI

774-70V639S12BFI
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IC SRAM 2.25MBIT PAR 208CABGA
36 Weeks

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
3A991B2A
Memory Organization
128K x 18
Mounting Type
Surface Mount
Memory Type
Volatile
Product Status
Active
Supplier Device Package
208-CABGA (15x15)
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70V639S12BFI Description

70V639S12BFI Description

The 70V639S12BFI is a high-performance, 2.25Mbit Static Random Access Memory (SRAM) IC designed by Renesas Electronics Corporation. This memory IC features a parallel memory interface and is organized as 128K x 18, providing a robust solution for applications requiring fast access times and reliable data storage. The 70V639S12BFI is designed for surface mount applications, making it ideal for compact and high-density electronic systems. It operates within a supply voltage range of 3.15V to 3.45V and offers an access time of 12ns, ensuring rapid data retrieval and processing. The memory is volatile, meaning it requires a constant power supply to retain data, but it provides fast read and write cycles, essential for real-time applications.

70V639S12BFI Features

  • Memory Organization: 128K x 18, providing a total memory size of 2.25Mbit.
  • Access Time: 12ns, ensuring rapid data retrieval and processing.
  • Write Cycle Time: 12ns, supporting fast write operations.
  • Memory Type: Volatile SRAM, ideal for applications requiring frequent data updates.
  • Supply Voltage: 3.15V to 3.45V, ensuring compatibility with a range of power supplies.
  • Mounting Type: Surface Mount, suitable for compact and high-density designs.
  • Package: 208CABGA, offering a robust and reliable physical form factor.
  • Moisture Sensitivity Level (MSL): Level 3 (168 Hours), ensuring reliability in various environmental conditions.
  • Compliance: REACH Unaffected and ECCN 3A991B2A, meeting international regulatory standards.
  • Manufacturer: Renesas Electronics Corporation, a trusted name in semiconductor solutions.

70V639S12BFI Applications

The 70V639S12BFI is well-suited for a variety of applications where fast access times and reliable data storage are critical. Its 12ns access time and 12ns write cycle time make it ideal for real-time processing and high-speed data handling. The 2.25Mbit memory size provides ample storage for complex systems, while the parallel memory interface ensures efficient data transfer. Specific use cases include:

  • High-Performance Computing: Ideal for systems requiring rapid data access and processing.
  • Telecommunications: Suitable for applications needing fast data retrieval and storage.
  • Industrial Control Systems: Provides reliable memory solutions for real-time control and monitoring.
  • Automotive Electronics: Ensures fast and reliable data handling in automotive systems.
  • Medical Devices: Supports high-speed data processing in medical imaging and diagnostic equipment.

Conclusion of 70V639S12BFI

The 70V639S12BFI is a high-performance SRAM IC that offers significant advantages over similar models. Its fast access and write cycle times, combined with a robust surface mount package and compliance with international standards, make it a reliable choice for a wide range of applications. The 2.25Mbit memory size and parallel interface ensure efficient data handling, making it ideal for high-speed, real-time systems. Renesas Electronics Corporation's reputation for quality and innovation further enhances the appeal of this memory IC.

FAQ

What is the mounting type of 70V639S12BFI?
70V639S12BFI uses a Surface Mount mounting style based on the listed product specifications.
What voltage specification is listed for 70V639S12BFI?
What operating temperature range does 70V639S12BFI support?
What is the standard lead time for 70V639S12BFI?
What is 70V639S12BFI?
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