Renesas Electronics Corporation_71V67603S133BQI8
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Renesas Electronics Corporation
71V67603S133BQI8

774-71V67603S133BQI8
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IC SRAM 9MBIT PARALLEL 165CABGA

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ISO9001
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Tech Specifications

Clock Frequency
133 MHz
Memory Type
Volatile
Product Status
Last Time Buy
Supplier Device Package
165-CABGA (13x15)
Access Time
4.2 ns
Package / Case
165-TBGA
Technology
SRAM - Synchronous, SDR
Voltage - Supply
3.135V ~ 3.465V
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71V67603S133BQI8 Description

71V67603S133BQI8 Description

The 71V67603S133BQI8 is a high-performance Static Random Access Memory (SRAM) IC chip manufactured by Renesas Electronics Corporation. This memory chip is designed for demanding applications requiring fast access times and reliable performance. With a clock frequency of 133 MHz and an access time of 4.2 ns, the 71V67603S133BQI8 ensures rapid data retrieval and processing. The memory organization is 256K x 36, providing a total memory size of 9 Mbit. This volatile memory type is ideal for applications where data needs to be frequently accessed and modified.

The 71V67603S133BQI8 features a parallel memory interface, which allows for efficient data transfer and communication with other system components. The memory chip operates within a supply voltage range of 3.135V to 3.465V, ensuring compatibility with various power supply configurations. The chip is packaged in a Surface Mount 165CABGA format, making it suitable for compact and high-density PCB designs. The moisture sensitivity level (MSL) is rated at 3 (168 Hours), indicating its robustness against environmental moisture during manufacturing processes.

71V67603S133BQI8 Features

  • High-Speed Performance: With a clock frequency of 133 MHz and an access time of 4.2 ns, the 71V67603S133BQI8 delivers rapid data access, making it suitable for high-speed processing applications.
  • Volatile Memory: The SRAM memory type ensures that data can be quickly read and written, providing efficient performance for applications requiring frequent data updates.
  • Parallel Interface: The parallel memory interface allows for efficient data transfer, ensuring seamless communication with other system components.
  • Wide Voltage Range: The memory chip operates within a supply voltage range of 3.135V to 3.465V, offering flexibility in power supply configurations.
  • Surface Mount Packaging: The 165CABGA package format is ideal for compact and high-density PCB designs, making it suitable for space-constrained applications.
  • Moisture Sensitivity Level: Rated at MSL 3 (168 Hours), the chip is robust against environmental moisture, ensuring reliability during manufacturing processes.

71V67603S133BQI8 Applications

The 71V67603S133BQI8 is ideal for a variety of high-performance applications, including:

  • Telecommunications: High-speed data processing and storage in communication systems.
  • Networking: Efficient data caching and buffering in network routers and switches.
  • Industrial Automation: Real-time data processing in industrial control systems.
  • Embedded Systems: Fast memory access for embedded devices requiring rapid data retrieval.
  • Consumer Electronics: High-speed memory solutions for gaming consoles, digital cameras, and other consumer devices.

Conclusion of 71V67603S133BQI8

The 71V67603S133BQI8 from Renesas Electronics Corporation is a high-performance SRAM memory chip designed to meet the demands of modern electronic systems. Its fast access times, parallel interface, and wide voltage range make it a versatile and reliable choice for a variety of applications. The surface mount packaging and moisture sensitivity rating ensure compatibility with modern manufacturing processes. Whether used in telecommunications, networking, industrial automation, or consumer electronics, the 71V67603S133BQI8 provides the performance and reliability needed to ensure efficient data processing and storage.

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