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Renesas Electronics Corporation
H5N2008P-E
285-H5N2008P-E
Trans MOSFET N-CH 200V 96A 3-Pin(3+Tab) TO-3P Magazine
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Tech Specifications
Drain to Source Voltage (Vdss)
200 V
Continuous Drain Current (ID)
96 A
RoHS
Non-Compliant
H5N2008P-E Description
Trans MOSFET N-CH 200V 96A 3-Pin(3+Tab) TO-3P Magazine
FAQ
What is H5N2008P-E?
H5N2008P-E is a RF FETs, MOSFETs from Renesas Electronics Corporation. This product page provides its main specifications, pricing information, availability, and inquiry options.
What voltage specification is listed for H5N2008P-E?
Is H5N2008P-E currently in stock?
Are there related or alternative parts for H5N2008P-E?
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