Renesas Electronics Corporation_H5N2305P-E
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Renesas Electronics Corporation
H5N2305P-E

278-H5N2305P-E
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Tech Specifications

FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
Product Status
Active
Supplier Device Package
TO-3PFM
Drain to Source Voltage (Vdss)
230 V
Power Dissipation (Max)
60W (Tc)
Package / Case
TO-3PFM, SC-93-3
Technology
MOSFET (Metal Oxide)
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H5N2305P-E Description

Bulk provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the H5N2305P-E belongs to can be classified under the Discrete Semiconductors. H5N2305P-E is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. H5N2305P-E provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Renesas Electronics Corporation plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Renesas Electronics Corporation is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Renesas Electronics Corporation builds trust with consumers and enhances the overall reputation of their products.

FAQ

What operating temperature range does H5N2305P-E support?
H5N2305P-E has an operating temperature range of 150°C.
Is H5N2305P-E currently in stock?
What is H5N2305P-E?
Are there related or alternative parts for H5N2305P-E?
What is the mounting type of H5N2305P-E?
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