Renesas Electronics Corporation_HAT2099H-EL-E
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Renesas Electronics Corporation
HAT2099H-EL-E

278-HAT2099H-EL-E
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MOSFET N-CH 30V 50A LFPAK

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
4750 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 10 V
Product Status
Active
Supplier Device Package
LFPAK
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
30W (Tc)
Package / Case
SC-100, SOT-669
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HAT2099H-EL-E Description

HAT2099H-EL-E Description

The HAT2099H-EL-E is a high-performance MOSFET (Metal Oxide) device from Renesas Electronics Corporation. It is designed to offer superior electrical characteristics and reliability for a wide range of applications. This N-channel MOSFET features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 50A at 25°C. The device is available in a surface-mount LFPAK package, making it suitable for high-density PCB layouts.

HAT2099H-EL-E Features

  • Input Capacitance (Ciss): The HAT2099H-EL-E has a maximum input capacitance of 4750 pF at 10V, ensuring fast switching performance.
  • Gate Charge (Qg): With a maximum gate charge of 75 nC at 10V, this MOSFET minimizes switching losses and improves efficiency.
  • Rds On (Max): The maximum on-resistance (Rds On) is 3.7 mOhm at 25A and 10V, providing low conduction losses.
  • Drive Voltage: The device operates with a maximum drive voltage of 4.5V and a minimum drive voltage of 10V, enabling easy integration into various circuits.
  • Power Dissipation: The HAT2099H-EL-E can dissipate up to 30W of power at the case temperature (Tc), making it suitable for high-power applications.
  • Operating Temperature: The device is rated for operation up to 150°C junction temperature (TJ), ensuring reliable performance in harsh environments.
  • RoHS Compliance: The HAT2099H-EL-E is compliant with RoHS3 regulations, making it suitable for environmentally friendly applications.

HAT2099H-EL-E Applications

The HAT2099H-EL-E is ideal for various applications that require high power and fast switching capabilities. Some specific use cases include:

  1. Power Supplies: Due to its high power dissipation and low on-resistance, the HAT2099H-EL-E is suitable for power supply designs, such as SMPS (Switched-Mode Power Supplies) and DC-DC converters.
  2. Motor Control: The device's high current handling capability makes it an excellent choice for motor control applications, including industrial automation and robotics.
  3. Automotive: The HAT2099H-EL-E can be used in automotive applications, such as electric power steering and battery management systems, due to its high reliability and temperature rating.
  4. Renewable Energy: The device's high power and fast switching capabilities make it suitable for renewable energy applications, such as solar inverters and wind power systems.

Conclusion of HAT2099H-EL-E

The HAT2099H-EL-E is a high-performance MOSFET from Renesas Electronics Corporation, offering superior electrical characteristics and reliability for a wide range of applications. Its unique features, such as low on-resistance, high power dissipation, and fast switching capabilities, make it an ideal choice for high-power and high-efficiency applications. With its RoHS compliance and wide operating temperature range, the HAT2099H-EL-E is a versatile and reliable solution for demanding applications in power supplies, motor control, automotive, and renewable energy systems.

FAQ

What voltage specification is listed for HAT2099H-EL-E?
The listed voltage-related specification for HAT2099H-EL-E is 30 V.
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