Renesas Electronics Corporation
HAT2160H-E

285-HAT2160H-E
PDF Datasheet
MOSFET N-CH 20V 60A LFPAK

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Tech Specifications

Status
Active
Max Gate Charge
54nC @ 4.5V
Continuous Drain Current at 25°C
60A (Ta)
Dimension
SC-100, SOT-669
Max Input Capacitance
7750pF @ 10V
Gate-Source Threshold Voltage
2.3V @ 1mA
Mounting
SMD (SMT)
Power Dissipation (Max)
30W (Tc)
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HAT2160H-E Description

Reel - TR provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The RF FETs, MOSFETs that the HAT2160H-E belongs to can be classified under the Discrete Semiconductors. HAT2160H-E is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. HAT2160H-E provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Renesas Electronics Corporation plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Renesas Electronics Corporation is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Renesas Electronics Corporation builds trust with consumers and enhances the overall reputation of their products.

FAQ

What is HAT2160H-E?
HAT2160H-E is a RF FETs, MOSFETs from Renesas Electronics Corporation. This product page provides its main specifications, pricing information, availability, and inquiry options.
Is HAT2160H-E currently in stock?
Are there related or alternative parts for HAT2160H-E?
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