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HAT2164H-EL-E

HAT2164H-EL-E Description

The HAT2164H-EL-E is a high-performance MOSFET (Metal Oxide) device from Renesas Electronics Corporation, designed for applications requiring robust power handling and efficient switching capabilities. This N-channel MOSFET is rated for a drain-source voltage of 30V and can handle continuous drain currents up to 60A at 25°C. With a maximum power dissipation of 30W and an operating temperature range of -55°C to 150°C (TJ), the HAT2164H-EL-E is well-suited for a variety of demanding applications.

HAT2164H-EL-E Features

• Low Rds(on): The HAT2164H-EL-E boasts a low on-resistance of 3.1mOhm at 30A and 10V, which minimizes power losses and improves efficiency in high-current applications.
• High Input Capacitance (Ciss): With a maximum input capacitance of 7600 pF at 10V, this MOSFET offers fast switching speeds and reduced gate charge, which is beneficial for high-frequency applications.
• Robust Gate Charge (Qg): The maximum gate charge is 50 nC at 4.5V, ensuring reliable operation and minimal gate drive requirements.
• Surface Mount Technology: The LFPAK package allows for efficient PCB layout and improved thermal performance, making it ideal for space-constrained designs.
• Compliance: The HAT2164H-EL-E is compliant with RoHS3 and REACH regulations, ensuring environmental sustainability and regulatory compliance.

HAT2164H-EL-E Applications

The HAT2164H-EL-E is an excellent choice for applications that demand high power handling, efficient switching, and robust performance. Some specific use cases include:

• Industrial Automation: In motor drives and power supplies, where high currents and voltages are common.
• Automotive Systems: For in-vehicle power management and electric vehicle (EV) charging systems.
• Power Supplies: In high-efficiency power conversion and regulation applications, such as SMPS and DC-DC converters.
• Renewable Energy: In solar inverters and wind turbine power electronics, where reliability and efficiency are critical.

Conclusion of HAT2164H-EL-E

The HAT2164H-EL-E from Renesas Electronics Corporation is a versatile and high-performance MOSFET, offering a combination of low on-resistance, high input capacitance, and robust power handling capabilities. Its compliance with environmental regulations and suitability for surface mount technology make it an ideal choice for a wide range of applications in industrial, automotive, and renewable energy sectors. With its unique features and advantages, the HAT2164H-EL-E stands out as a reliable and efficient solution for demanding power electronic applications.