Renesas Electronics Corporation_HAT2168H-EL-E
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Renesas Electronics Corporation
HAT2168H-EL-E

278-HAT2168H-EL-E
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MOSFET N-CH 30V 30A LFPAK

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1730 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 4.5 V
Product Status
Active
Supplier Device Package
LFPAK
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
15W (Tc)
Package / Case
SC-100, SOT-669
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HAT2168H-EL-E Description

HAT2168H-EL-E Description

The HAT2168H-EL-E is a high-performance MOSFET (Metal Oxide) N-CH 30V 30A LFPAK from Renesas Electronics Corporation. This device is designed for applications requiring high power dissipation and low on-resistance. With a maximum power dissipation of 15W (Tc) and a low Rds On of 7.9mOhm @ 15A, 10V, it offers excellent efficiency and performance.

HAT2168H-EL-E Features

  • Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 10 V
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
  • Product Status: Active
  • Supplier Device Package: LFPAK
  • Drain to Source Voltage (Vdss): 30 V
  • Power Dissipation (Max): 15W (Tc)
  • Technology: MOSFET (Metal Oxide)
  • REACH Status: REACH Unaffected
  • Mfr: Renesas Electronics Corporation
  • Vgs (Max): ±20V
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Operating Temperature: 150°C (TJ)
  • ECCN: EAR99
  • Mounting Type: Surface Mount
  • Rds On (Max) @ Id, Vgs: 7.9mOhm @ 15A, 10V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • HTSUS: 8541.29.0095
  • Package: Tape & Reel (TR)
  • Base Product Number: HAT2168

HAT2168H-EL-E Applications

The HAT2168H-EL-E is ideal for various applications where high power dissipation and low on-resistance are required. Some specific use cases include:

  1. Power Supplies: Due to its high power dissipation and low on-resistance, it is suitable for power supply applications.
  2. Industrial Control: Its robust performance makes it suitable for industrial control systems.
  3. Automotive: The device's high temperature rating and power dissipation capabilities make it suitable for automotive applications.

Conclusion of HAT2168H-EL-E

The HAT2168H-EL-E from Renesas Electronics Corporation is a high-performance MOSFET designed for applications requiring high power dissipation and low on-resistance. Its unique features, such as a low Rds On of 7.9mOhm @ 15A, 10V and a maximum power dissipation of 15W (Tc), make it an ideal choice for power supplies, industrial control systems, and automotive applications. With its active product status and compliance with REACH and RoHS3 standards, the HAT2168H-EL-E is a reliable and efficient solution for high-power applications.

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