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HAT2169H-EL-E

HAT2169H-EL-E Description

The HAT2169H-EL-E is a high-performance N-Channel MOSFET from Renesas Electronics Corporation, designed for a wide range of applications requiring high power and efficiency. With a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 50A at 25°C, this MOSFET is ideal for demanding power electronics applications.

HAT2169H-EL-E Features

• High Power Handling: Capable of handling up to 30W of power dissipation (Tc) and 50A continuous drain current (Id) at 25°C, making it suitable for high-power applications.
• Low On-Resistance: Features a maximum Rds(on) of 3.5mOhm at 25A, 10V, ensuring low power loss and high efficiency.
• Robust Voltage Ratings: Operates with a maximum gate-source voltage (Vgs) of ±20V and a drain-to-source voltage (Vdss) of 40V, providing robust performance in various conditions.
• Surface Mount Technology: Packaged in a LFPAK (Low Forward Power Array) package, allowing for surface mount applications and easy integration into PCB designs.
• Compliance and Certifications: RoHS3 compliant, REACH unaffected, and moisture sensitivity level (MSL) 1, ensuring environmental and regulatory compliance.

HAT2169H-EL-E Applications

The HAT2169H-EL-E is ideal for a variety of high-power applications, including:

1. Power Supplies: Due to its high power handling capabilities, it is suitable for use in power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
2. Industrial Control: Its robust voltage ratings and low on-resistance make it an excellent choice for motor control and other industrial control applications.
3. Automotive Electronics: The HAT2169H-EL-E can be used in various automotive electronics, such as electric vehicle (EV) chargers and power management systems.
4. Telecommunications: Its high power handling and low on-resistance make it suitable for use in telecommunications equipment, such as power amplifiers and signal conditioning circuits.

Conclusion of HAT2169H-EL-E

The HAT2169H-EL-E from Renesas Electronics Corporation is a high-performance N-Channel MOSFET that offers a combination of high power handling, low on-resistance, and robust voltage ratings. Its surface mount packaging and compliance with environmental and regulatory standards make it an ideal choice for a wide range of high-power applications in power supplies, industrial control, automotive electronics, and telecommunications. With its unique features and advantages over similar models, the HAT2169H-EL-E is a reliable and efficient solution for demanding power electronics applications.