Renesas Electronics Corporation_HAT2170H-EL-E
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Renesas Electronics Corporation
HAT2170H-EL-E

278-HAT2170H-EL-E
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MOSFET N-CH 40V 45A LFPAK

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
4650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 10 V
Product Status
Active
Supplier Device Package
LFPAK
Drain to Source Voltage (Vdss)
40 V
Power Dissipation (Max)
30W (Tc)
Package / Case
SC-100, SOT-669
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HAT2170H-EL-E Description

HAT2170H-EL-E Description

The HAT2170H-EL-E is a high-performance MOSFET (Metal Oxide) from Renesas Electronics Corporation, designed for applications requiring high power and efficiency. With a drain to source voltage (Vdss) of 40V and a continuous drain current (Id) of 45A at 25°C, this N-channel MOSFET is ideal for power electronics and motor control applications. The device is available in a surface-mount LFPAK package, making it suitable for space-constrained designs.

HAT2170H-EL-E Features

  • High Power Dissipation: The HAT2170H-EL-E can handle a maximum power dissipation of 30W, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 4.2mOhm at 22.5A and 10V, this MOSFET offers low on-resistance for efficient power management.
  • Robust Gate Charge: The maximum gate charge (Qg) is 62nC at 10V, ensuring fast switching performance.
  • Wide Operating Temperature: The device operates at a junction temperature (TJ) of up to 150°C, making it suitable for harsh environments.
  • Compliance: The HAT2170H-EL-E is REACH unaffected, RoHS3 compliant, and has a moisture sensitivity level (MSL) of 1, indicating unlimited storage time before reflow soldering.

HAT2170H-EL-E Applications

The HAT2170H-EL-E is ideal for a variety of applications, including:

  • Power Electronics: Due to its high power dissipation and low on-resistance, this MOSFET is well-suited for power conversion and regulation in power supplies and inverters.
  • Motor Control: The device's high current handling capability makes it suitable for motor drive applications, such as electric vehicles and industrial motor control systems.
  • Industrial Automation: The HAT2170H-EL-E can be used in industrial automation systems, such as robotic arms and conveyor systems, where high power and efficiency are required.

Conclusion of HAT2170H-EL-E

The HAT2170H-EL-E from Renesas Electronics Corporation is a powerful and efficient MOSFET, offering high power dissipation, low on-resistance, and robust performance in a compact LFPAK package. Its compliance with industry standards and wide operating temperature range make it an excellent choice for high-power applications in power electronics, motor control, and industrial automation. With its unique features and advantages, the HAT2170H-EL-E stands out as a reliable and high-performance solution for demanding applications.

FAQ

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Yes. HAT2170H-EL-E currently shows 7506 unit(s) in stock.
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