Renesas Electronics Corporation_HAT2174H-EL-E
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Renesas Electronics Corporation
HAT2174H-EL-E

278-HAT2174H-EL-E
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MOSFET N-CH 100V 20A LFPAK

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
2280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
33.5 nC @ 10 V
Product Status
Active
Supplier Device Package
LFPAK
Drain to Source Voltage (Vdss)
100 V
Power Dissipation (Max)
20W (Tc)
Package / Case
SC-100, SOT-669
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HAT2174H-EL-E Description

HAT2174H-EL-E Description

The HAT2174H-EL-E is a high-performance MOSFET (Metal Oxide) from Renesas Electronics Corporation, designed for applications requiring high voltage and current capabilities. With a drain to source voltage of 100V and a continuous drain current of 20A at 25°C, this N-Channel MOSFET is ideal for power electronics and motor control applications. The device is available in a surface-mount LFPAK package, making it suitable for use in compact and space-constrained designs.

HAT2174H-EL-E Features

  • High Voltage and Current Ratings: The HAT2174H-EL-E can handle a drain to source voltage of up to 100V and a continuous drain current of 20A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum on-resistance of 27mOhm at 10A and 10V, this MOSFET offers low power dissipation and high efficiency in switching applications.
  • Robust Gate Charge Characteristics: The device has a maximum gate charge of 33.5nC at 10V, ensuring fast switching speeds and reduced switching losses.
  • Wide Operating Temperature Range: The HAT2174H-EL-E can operate at temperatures up to 150°C, making it suitable for use in harsh environments.
  • Compliance with Industry Standards: The device is compliant with the RoHS3 standard and is unaffected by REACH regulations, ensuring environmental compliance in electronic designs.

HAT2174H-EL-E Applications

The HAT2174H-EL-E is ideal for a variety of high-power applications, including:

  • Power Electronics: Due to its high voltage and current ratings, this MOSFET is well-suited for use in power electronics, such as power supplies and converters.
  • Motor Control: The low on-resistance and high current capabilities make it an excellent choice for motor control applications, including electric vehicles and industrial motor drives.
  • Industrial Automation: The robustness and high temperature operation of the HAT2174H-EL-E make it suitable for use in industrial automation equipment, such as robotic arms and conveyor systems.

Conclusion of HAT2174H-EL-E

The HAT2174H-EL-E from Renesas Electronics Corporation is a high-performance MOSFET that offers a combination of high voltage and current ratings, low on-resistance, and robust gate charge characteristics. Its compliance with industry standards and wide operating temperature range make it an ideal choice for a variety of high-power applications, including power electronics, motor control, and industrial automation. With its unique features and advantages over similar models, the HAT2174H-EL-E is a reliable and efficient solution for demanding electronic designs.

FAQ

Are there related or alternative parts for HAT2174H-EL-E?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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