Renesas Electronics Corporation_HAT2197R-EL-E
original

Renesas Electronics Corporation
HAT2197R-EL-E

278-HAT2197R-EL-E
PDF Datasheet
MOSFET N-CH 30V 16A 8SOP

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
2650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 4.5 V
Product Status
Active
Supplier Device Package
8-SOP
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
2.5W (Ta)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Show More

HAT2197R-EL-E Description

HAT2197R-EL-E Description

The HAT2197R-EL-E is a high-performance MOSFET (Metal Oxide) device manufactured by Renesas Electronics Corporation. This N-channel, 30V, 16A MOSFET is designed for surface mount applications and is available in an 8-pin Small Outline Package (SOP). With its advanced technology and robust performance, the HAT2197R-EL-E is an ideal choice for various power management and switching applications.

HAT2197R-EL-E Features

  • Input Capacitance (Ciss): The maximum input capacitance is 2650 pF at 10 V, ensuring fast switching and minimal signal distortion.
  • Gate Charge (Qg): The maximum gate charge is 18 nC at 4.5 V, reducing power consumption and improving efficiency.
  • Drain to Source Voltage (Vdss): The device can handle a maximum drain-to-source voltage of 30 V, making it suitable for a wide range of applications.
  • Power Dissipation: With a maximum power dissipation of 2.5W at ambient temperature, the HAT2197R-EL-E can handle demanding power requirements.
  • Operating Temperature: The device operates within a wide temperature range of -55°C to 150°C, ensuring reliable performance in various environmental conditions.
  • Rds On (Max): The maximum on-state resistance is 6.7 mOhm at 8A and 10V, providing low conduction losses and high efficiency.
  • Drive Voltage: The device has a maximum drive voltage of 4.5V and a minimum drive voltage of 10V, ensuring compatibility with various gate drive circuits.
  • Moisture Sensitivity Level (MSL): The HAT2197R-EL-E has an MSL of 1, indicating unlimited storage time in its sealed package.

HAT2197R-EL-E Applications

The HAT2197R-EL-E is ideal for a variety of applications, including:

  • Power Management: Its low on-state resistance and high current handling capabilities make it suitable for power management circuits in consumer electronics and industrial equipment.
  • Motor Control: The device's ability to handle high voltages and currents makes it an excellent choice for motor control applications, such as in electric vehicles and industrial automation systems.
  • Switching Applications: The HAT2197R-EL-E's fast switching and low gate charge make it ideal for high-frequency switching applications, such as in power supplies and inverters.

Conclusion of HAT2197R-EL-E

The HAT2197R-EL-E is a versatile and high-performance MOSFET that offers excellent technical specifications and performance benefits. Its unique features, such as low on-state resistance, high input capacitance, and wide operating temperature range, make it an ideal choice for a variety of power management, motor control, and switching applications. With its compliance to RoHS3 and REACH standards, the HAT2197R-EL-E is not only a reliable choice but also an environmentally responsible one.

FAQ

What voltage specification is listed for HAT2197R-EL-E?
The listed voltage-related specification for HAT2197R-EL-E is 30 V.
Is HAT2197R-EL-E currently in stock?
What operating temperature range does HAT2197R-EL-E support?
What is the mounting type of HAT2197R-EL-E?
Are there related or alternative parts for HAT2197R-EL-E?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ