Renesas Electronics Corporation_HAT2266H-EL-E
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Renesas Electronics Corporation
HAT2266H-EL-E

278-HAT2266H-EL-E
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MOSFET N-CH 60V 30A LFPAK

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 4.5 V
Product Status
Active
Supplier Device Package
LFPAK
Drain to Source Voltage (Vdss)
60 V
Power Dissipation (Max)
23W (Tc)
Package / Case
SC-100, SOT-669
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HAT2266H-EL-E Description

HAT2266H-EL-E Description

The HAT2266H-EL-E is a high-performance N-Channel MOSFET from Renesas Electronics Corporation. This MOSFET is designed for applications requiring high power dissipation and robust performance. With a drain-source voltage rating of 60V and a continuous drain current of 30A at 25°C, it is well-suited for demanding applications. The device is available in a surface-mount LFPAK package, making it ideal for space-constrained designs.

HAT2266H-EL-E Features

  • Input Capacitance (Ciss): The HAT2266H-EL-E has a maximum input capacitance of 3600 pF at 10V, ensuring fast switching performance.
  • Gate Charge (Qg): With a maximum gate charge of 25 nC at 4.5V, this MOSFET minimizes power loss during switching.
  • Power Dissipation: Capable of dissipating up to 23W at the case temperature, this device is suitable for high-power applications.
  • Technology: The MOSFET is based on advanced Metal Oxide technology, providing excellent electrical characteristics and reliability.
  • Operating Temperature: The HAT2266H-EL-E operates at a junction temperature of up to 150°C, making it suitable for high-temperature environments.
  • Rds On (Max): With a maximum on-resistance of 12mOhm at 15A and 10V, this MOSFET offers low conduction losses.
  • Vgs(th) (Max): The threshold voltage is 2.5V at 1mA, ensuring reliable operation across a wide range of input voltages.

HAT2266H-EL-E Applications

The HAT2266H-EL-E is ideal for applications where high power handling and low on-resistance are critical. Some specific use cases include:

  • Power Supplies: Due to its high voltage and current ratings, this MOSFET is suitable for power supply designs.
  • Motor Controls: The low on-resistance and high current capability make it an excellent choice for motor control applications.
  • Automotive Electronics: The high operating temperature and robust performance make it suitable for automotive electronics, such as inverter systems.

Conclusion of HAT2266H-EL-E

The HAT2266H-EL-E from Renesas Electronics Corporation is a high-performance N-Channel MOSFET designed for demanding applications. Its unique combination of high voltage, low on-resistance, and robust performance make it an excellent choice for power supplies, motor controls, and automotive electronics. With its advanced technology and compliance with industry standards, the HAT2266H-EL-E is a reliable and efficient solution for high-power applications.

FAQ

What voltage specification is listed for HAT2266H-EL-E?
The listed voltage-related specification for HAT2266H-EL-E is 60 V.
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