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HAT2266H-EL-E
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HAT2266H-EL-E Description
HAT2266H-EL-E Description
The HAT2266H-EL-E is a high-performance N-Channel MOSFET from Renesas Electronics Corporation. This MOSFET is designed for applications requiring high power dissipation and robust performance. With a drain-source voltage rating of 60V and a continuous drain current of 30A at 25°C, it is well-suited for demanding applications. The device is available in a surface-mount LFPAK package, making it ideal for space-constrained designs.
HAT2266H-EL-E Features
- Input Capacitance (Ciss): The HAT2266H-EL-E has a maximum input capacitance of 3600 pF at 10V, ensuring fast switching performance.
- Gate Charge (Qg): With a maximum gate charge of 25 nC at 4.5V, this MOSFET minimizes power loss during switching.
- Power Dissipation: Capable of dissipating up to 23W at the case temperature, this device is suitable for high-power applications.
- Technology: The MOSFET is based on advanced Metal Oxide technology, providing excellent electrical characteristics and reliability.
- Operating Temperature: The HAT2266H-EL-E operates at a junction temperature of up to 150°C, making it suitable for high-temperature environments.
- Rds On (Max): With a maximum on-resistance of 12mOhm at 15A and 10V, this MOSFET offers low conduction losses.
- Vgs(th) (Max): The threshold voltage is 2.5V at 1mA, ensuring reliable operation across a wide range of input voltages.
HAT2266H-EL-E Applications
The HAT2266H-EL-E is ideal for applications where high power handling and low on-resistance are critical. Some specific use cases include:
- Power Supplies: Due to its high voltage and current ratings, this MOSFET is suitable for power supply designs.
- Motor Controls: The low on-resistance and high current capability make it an excellent choice for motor control applications.
- Automotive Electronics: The high operating temperature and robust performance make it suitable for automotive electronics, such as inverter systems.
Conclusion of HAT2266H-EL-E
The HAT2266H-EL-E from Renesas Electronics Corporation is a high-performance N-Channel MOSFET designed for demanding applications. Its unique combination of high voltage, low on-resistance, and robust performance make it an excellent choice for power supplies, motor controls, and automotive electronics. With its advanced technology and compliance with industry standards, the HAT2266H-EL-E is a reliable and efficient solution for high-power applications.



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