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HAT2267H-EL-E

HAT2267H-EL-E Description

The HAT2267H-EL-E is a high-performance N-Channel MOSFET from Renesas Electronics Corporation, designed for demanding applications that require high voltage and current capabilities. This MOSFET stands out for its robust technical specifications and excellent performance benefits, making it an ideal choice for various electronic devices.

HAT2267H-EL-E Features

• Technology: MOSFET (Metal Oxide) - Ensures high efficiency and reliability in power management applications.
• Drain to Source Voltage (Vdss): 80 V - Capable of handling high voltage applications.
• Current - Continuous Drain (Id) @ 25°C: 25A (Ta) - Delivers high current capabilities for demanding power management tasks.
• Rds On (Max) @ Id, Vgs: 16mOhm @ 12.5A, 10V - Offers low on-resistance for efficient power dissipation.
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V - Minimizes switching losses and improves overall efficiency.
• Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 10 V - Reduces parasitic effects and enhances performance.
• Power Dissipation (Max): 25W (Tc) - Suitable for applications with moderate power dissipation requirements.
• Operating Temperature: 150°C (TJ) - Designed to operate in high-temperature environments.
• Mounting Type: Surface Mount - Facilitates easy integration into surface-mount technology (SMT) processes.

HAT2267H-EL-E Applications

The HAT2267H-EL-E is ideal for various applications where high voltage and current capabilities are required, such as:

1. Power Management Systems: Its high voltage and current ratings make it suitable for power conversion and regulation in electronic devices.
2. Industrial Control Systems: The MOSFET's robust performance and high temperature tolerance make it an excellent choice for industrial control applications.
3. Automotive Electronics: The HAT2267H-EL-E can be used in automotive applications, such as electric vehicle charging systems and powertrain control.
4. Renewable Energy Systems: Its high voltage and current capabilities make it suitable for solar power inverters and wind energy conversion systems.

Conclusion of HAT2267H-EL-E

The HAT2267H-EL-E from Renesas Electronics Corporation is a high-performance N-Channel MOSFET that offers exceptional technical specifications and performance benefits. Its unique features, such as low on-resistance, high voltage and current capabilities, and high temperature tolerance, make it an ideal choice for a wide range of applications, including power management systems, industrial control systems, automotive electronics, and renewable energy systems. With its robust performance and compliance with industry standards, the HAT2267H-EL-E is a reliable and efficient solution for demanding electronic devices.