Renesas Electronics Corporation Tariff Inquiry

IDT71V124SA20YG

IDT71V124SA20YG Description

The IDT71V124SA20YG is a 1Mbit Static Random Access Memory (SRAM) IC designed for high-performance applications requiring fast access times and reliable data storage. Manufactured by Renesas Electronics Corporation, this memory IC chip features a parallel memory interface and is organized as 128K x 8, providing a total memory size of 1Mbit. The IDT71V124SA20YG operates within a voltage supply range of 3V to 3.6V and is optimized for an access time of 20 nanoseconds, ensuring rapid data retrieval. The write cycle time for both word and page operations is also 20 nanoseconds, making it highly efficient for applications that require frequent data updates.

IDT71V124SA20YG Features

• Memory Organization: The IDT71V124SA20YG is organized as 128K x 8, providing a total memory capacity of 1Mbit. This organization allows for efficient memory addressing and data storage.
• Access Time: With an access time of 20 nanoseconds, the IDT71V124SA20YG ensures rapid data retrieval, making it suitable for high-speed applications.
• Write Cycle Time: The write cycle time for both word and page operations is 20 nanoseconds, ensuring efficient data updates and minimizing latency.
• Voltage Supply: The memory IC operates within a voltage supply range of 3V to 3.6V, providing flexibility in power supply requirements.
• Operating Temperature: The IDT71V124SA20YG is designed to operate within a temperature range of 0°C to 70°C (TA), making it suitable for a wide range of environmental conditions.
• Mounting Type: The surface mount technology (SMT) ensures easy integration into modern electronic designs, providing a compact and reliable solution.
• Memory Type: As a volatile memory, the IDT71V124SA20YG retains data as long as power is supplied, making it ideal for applications requiring frequent data updates and access.
• Package: The IDT71V124SA20YG comes in a tube package, ensuring safe handling and storage during manufacturing and assembly processes.
• Moisture Sensitivity Level (MSL): With an MSL of 3 (168 hours), the IDT71V124SA20YG is designed to withstand moderate moisture exposure, ensuring reliability during manufacturing processes.

IDT71V124SA20YG Applications

The IDT71V124SA20YG is ideal for a variety of applications that require fast access times and reliable data storage. Some specific use cases include:

• Embedded Systems: The fast access times and reliable data storage capabilities make the IDT71V124SA20YG suitable for embedded systems where quick data retrieval and updates are critical.
• Networking Equipment: The high-speed performance and efficient memory organization make it ideal for networking applications where data needs to be processed and transmitted quickly.
• Industrial Control Systems: The robust operating temperature range and reliable performance ensure that the IDT71V124SA20YG can withstand the demanding conditions of industrial environments.
• Consumer Electronics: The compact surface mount design and efficient power supply range make it suitable for consumer electronics where space and power consumption are key considerations.

Conclusion of IDT71V124SA20YG

The IDT71V124SA20YG from Renesas Electronics Corporation is a high-performance SRAM IC designed for applications requiring fast access times and reliable data storage. With its 128K x 8 memory organization, 20 nanosecond access and write cycle times, and surface mount technology, the IDT71V124SA20YG offers a compact and efficient solution for a variety of applications. While the product is marked as obsolete, its unique features and performance benefits make it a valuable component for existing designs and legacy systems.