Renesas Electronics Corporation
IDT71V256SA15Y8
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IDT71V256SA15Y8 Description
IDT71V256SA15Y8 Description
The IDT71V256SA15Y8 is a 256Kbit Static Random Access Memory (SRAM) IC designed by Renesas Electronics Corporation. This memory IC features a parallel memory interface and is organized as 32K x 8, providing a robust solution for applications requiring high-speed, volatile memory. The device operates within a temperature range of 0°C to 70°C (TA) and supports a supply voltage of 3V to 3.6V. With an access time of 15 ns and a write cycle time of 15 ns, the IDT71V256SA15Y8 ensures fast data read and write operations. The memory IC is available in a Surface Mount package, specifically in a 28SOJ format, and is delivered in Tape & Reel (TR) packaging. Although the product is now obsolete, it remains a reliable choice for legacy systems and specific applications that require its unique specifications.
IDT71V256SA15Y8 Features
- Memory Organization: 32K x 8, providing a total memory size of 256Kbit.
- Access Time: 15 ns, ensuring rapid data retrieval.
- Write Cycle Time: 15 ns for both word and page operations, facilitating efficient data storage.
- Voltage Range: Operates within a supply voltage range of 3V to 3.6V, suitable for low-power applications.
- Operating Temperature: 0°C to 70°C (TA), making it suitable for a wide range of environmental conditions.
- Memory Interface: Parallel, enabling straightforward integration with various systems.
- Mounting Type: Surface Mount, allowing for compact and reliable PCB designs.
- Package: 28SOJ, offering a robust and space-efficient solution.
- Moisture Sensitivity Level (MSL): Level 1 (Unlimited), ensuring the device is not susceptible to moisture damage.
- REACH Status: REACH Unaffected, complying with environmental and safety regulations.
- ECCN: EAR99, indicating compliance with export regulations.
IDT71V256SA15Y8 Applications
The IDT71V256SA15Y8 is ideal for applications requiring fast, volatile memory solutions. Its 15 ns access and write cycle times make it suitable for high-speed data processing and storage tasks. The parallel memory interface simplifies integration with various microcontrollers and processors, making it a versatile choice for embedded systems. Specific use cases include:
- Embedded Systems: Providing fast, temporary storage for critical data in embedded devices.
- Industrial Control Systems: Ensuring reliable and rapid data access in harsh industrial environments.
- Telecommunications: Supporting high-speed data buffering and temporary storage in communication equipment.
- Consumer Electronics: Enhancing the performance of devices that require quick data retrieval and storage.
Conclusion of IDT71V256SA15Y8
The IDT71V256SA15Y8, despite being obsolete, remains a valuable component for applications that require a reliable, high-speed SRAM solution. Its 15 ns access and write cycle times, combined with a robust 28SOJ package and a wide operating temperature range, make it an excellent choice for legacy systems and specific applications. The device's compliance with environmental and safety regulations ensures its suitability for modern electronics manufacturing. For developers and engineers working with legacy systems or requiring a specific SRAM configuration, the IDT71V256SA15Y8 offers a proven and efficient memory solution.



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