Renesas Electronics Corporation_IDT71V416VS15YG8
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Renesas Electronics Corporation
IDT71V416VS15YG8

774-IDT71V416VS15YG8
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IC SRAM 4MBIT PARALLEL 44SOJ

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Tech Specifications

Operating Temperature
0°C ~ 70°C (TA)
Memory Interface
Parallel
ECCN
3A991B2A
Memory Organization
256K x 16
Mounting Type
Surface Mount
Memory Type
Volatile
Product Status
Obsolete
Supplier Device Package
44-SOJ
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IDT71V416VS15YG8 Description

IDT71V416VS15YG8 Description

The IDT71V416VS15YG8 is a high-performance Static Random Access Memory (SRAM) IC designed by Renesas Electronics Corporation. This 4Mbit memory device is organized as 256K x 16, offering a robust solution for applications requiring fast access times and reliable data storage. The IDT71V416VS15YG8 features a parallel memory interface, ensuring efficient data transfer and compatibility with a wide range of systems. It operates within a supply voltage range of 3V to 3.6V and has an access time of 15 nanoseconds, making it suitable for high-speed applications. The memory is volatile, meaning it retains data only while power is supplied, which is ideal for applications where data is frequently updated.

IDT71V416VS15YG8 Features

  • Memory Size and Organization: The IDT71V416VS15YG8 offers a memory size of 4Mbit, organized as 256K x 16. This configuration provides a balance between memory capacity and data width, making it suitable for applications that require a moderate amount of memory with efficient data handling.
  • Fast Access Time: With an access time of 15 nanoseconds, this SRAM IC ensures rapid data retrieval, which is crucial for time-sensitive applications. The write cycle time is also 15 nanoseconds, ensuring consistent performance for both read and write operations.
  • Parallel Memory Interface: The parallel interface allows for high-speed data transfer, making it ideal for systems that require quick data access and manipulation.
  • Operating Temperature Range: The device operates within a temperature range of 0°C to 70°C (TA), making it suitable for a variety of industrial and commercial environments.
  • Surface Mount Packaging: The IDT71V416VS15YG8 is available in a surface mount package, specifically a 44-pin SOJ (Small Outline J-Lead) package. This packaging type is ideal for compact designs and high-density PCB layouts.
  • Moisture Sensitivity Level: The device has a moisture sensitivity level (MSL) of 3, which means it can be safely stored for up to 168 hours before being assembled, ensuring reliability during manufacturing processes.
  • Compliance and Standards: The IDT71V416VS15YG8 is REACH unaffected and complies with the HTSUS code 8542.32.0041, ensuring it meets environmental and regulatory standards.

IDT71V416VS15YG8 Applications

The IDT71V416VS15YG8 is well-suited for a variety of applications that require fast, reliable, and volatile memory solutions. Some specific use cases include:

  • Embedded Systems: Ideal for embedded systems where fast data access and reliable storage are critical. The 15 ns access time ensures that the system can quickly retrieve and process data, enhancing overall performance.
  • Industrial Control Systems: The operating temperature range and surface mount packaging make this SRAM IC suitable for industrial control systems that require robust and reliable memory solutions.
  • Telecommunications: In telecommunication applications, the IDT71V416VS15YG8 can be used for temporary data storage and fast data retrieval, ensuring efficient communication and data processing.
  • Consumer Electronics: The device's compact size and fast access time make it suitable for consumer electronics where space is limited, and performance is crucial.

Conclusion of IDT71V416VS15YG8

The IDT71V416VS15YG8 is a versatile and high-performance SRAM IC that offers a balance of memory capacity, fast access times, and reliable operation. Its parallel memory interface and surface mount packaging make it suitable for a wide range of applications, from embedded systems to industrial control systems. Despite being marked as obsolete, the IDT71V416VS15YG8 remains a reliable choice for applications that require fast, volatile memory solutions. Its compliance with environmental and regulatory standards ensures it meets the requirements of modern electronics manufacturing.

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